NXP Semiconductors - BLC9G20LS-120V

  1. Home
  2. NXP Semiconductors - BLC9G20LS-120V
BLC9G20LS-120V by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLC9G20LS-120V
Description RF Power Field-Effect Transistors;
Datasheet BLC9G20LS-120V Datasheet
In Stock4,700
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,700 - -

Popular Products

Category Top Products

A3G22H400-04SR3 by NXP Semiconductors

A3G22H400-04SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: GALLIUM NITRIDE; Minimum Operating Temperature: -55 Cel; Terminal Form: FLAT;
STAC1011-350 by STMicroelectronics

STAC1011-350

STMicroelectronics

STAC1011-350 by STMicroelectronics is a N-channel RF FET with 80V DS breakdown voltage. It operates in enhancement mode for L band applications, featuring a plastic/epoxy package and flat terminals. Ideal for amplifier circuits, this single configuration transistor is surface mountable with source connection in a rectangular flange mount package.
PD85006-E by STMicroelectronics

PD85006-E

STMicroelectronics

PD85006-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 2 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This compact surface mount device ensures efficient performance with a max power dissipation of 36.5 W.
MRF6V12500HSR5 by Freescale Semiconductor

MRF6V12500HSR5

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Qualification: Not Qualified; Case Connection: SOURCE;
934055916112 by NXP Semiconductors

934055916112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Qualification: Not Qualified; Peak Reflow Temperature (C): NOT SPECIFIED;
PD20015-E by STMicroelectronics

PD20015-E

STMicroelectronics

PD20015-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max temp of 165 °C.
934065907112 by NXP Semiconductors

934065907112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; JESD-30 Code: R-CDFM-F2; Transistor Application: AMPLIFIER;
934061847112 by NXP Semiconductors

934061847112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-CDFP-F2; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MMRF5300NR5 by NXP Semiconductors

MMRF5300NR5

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;
MRF9045 by Motorola

MRF9045

Motorola

MRF9045 by Motorola is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, suitable for amplifier applications. With a max power dissipation of 125W and operating temperature up to 200°C, it features a ceramic-metal-sealed co-fired package ideal for flange mount installations.
BLF6G22L-40BN,118 by Ampleon Netherlands B V

BLF6G22L-40BN,118

Ampleon Netherlands B V

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Reference Standard: IEC-60134; No. of Terminals: 6; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
PD20015STR-E by STMicroelectronics

PD20015STR-E

STMicroelectronics

PD20015STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in demanding environments.
AFT05MS003NT1 by Freescale Semiconductor

AFT05MS003NT1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Minimum Operating Temperature: -40 Cel; JESD-609 Code: e3;
934065224112 by NXP Semiconductors

934065224112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Position: DUAL;
934065695112 by NXP Semiconductors

934065695112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Position: DUAL; Transistor Element Material: SILICON; No. of Terminals: 4;
D1020UK by Tt Electronics Plc

D1020UK

Tt Electronics Plc

D1020UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with 70V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a max ID of 25A and a 200°C operating temperature. Commonly used as an amplifier, it has a metal-oxide semiconductor technology and gold terminal finish for high-performance applications.
934064634112 by NXP Semiconductors

934064634112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Terminal Form: FLAT; Package Style (Meter): FLATPACK;
A3V09H521-24SR6 by NXP Semiconductors

A3V09H521-24SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
CGH40120F by Wolfspeed

CGH40120F

Wolfspeed

CGH40120F by Wolfspeed is an N-CHANNEL RF Power FET with 120V DS Breakdown Voltage. It operates in S BAND, ideal for AMPLIFIER applications. Featuring GALLIUM NITRIDE technology, it has a max temp of 150°C and can operate from -40 to 150°C.
934061174118 by NXP Semiconductors

934061174118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Terminal Form: FLAT; Operating Mode: ENHANCEMENT MODE;