NXP Semiconductors - BLC9G27LS-150AV

  1. Home
  2. NXP Semiconductors - BLC9G27LS-150AV
BLC9G27LS-150AV by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLC9G27LS-150AV
Description RF Power Field-Effect Transistors;
Datasheet BLC9G27LS-150AV Datasheet
In Stock4,755
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,755 - -

Popular Products

Category Top Products

934056520135 by NXP Semiconductors

934056520135

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Transistor Element Material: SILICON; Terminal Form: FLAT;
934061138112 by NXP Semiconductors

934061138112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 8.2 A; Terminal Position: DUAL; Terminal Form: FLAT;
PTVA101K02EVV1XWSA1 by Wolfspeed

PTVA101K02EVV1XWSA1

Wolfspeed

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Package Style (Meter): FLANGE MOUNT; Highest Frequency Band: L BAND;
MRFE6VP6300HR3 by NXP Semiconductors

MRFE6VP6300HR3

NXP Semiconductors

NXP Semiconductors' MRFE6VP6300HR3 is an N-CHANNEL RF Power FET with 130V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a COMMON SOURCE configuration for AMPLIFIER applications. The package is RECTANGULAR and METAL-OXIDE SEMICONDUCTOR technology is used, with a max operating temperature of 225°C.
CGHV96050F1 by Wolfspeed

CGHV96050F1

Wolfspeed

Wolfspeed's CGHV96050F1 is an N-CHANNEL RF FET with 100V DS Breakdown Voltage, 10.75 dB Power Gain, and operates in DEPLETION MODE. Ideal for X BAND applications like AMPLIFIERS due to its GALLIUM NITRIDE technology, FLANGE MOUNT package style, and 6A Drain Current capability.
CGH40120F-TB by Wolfspeed

CGH40120F-TB

Wolfspeed

Wolfspeed's CGH40120F-TB is an N-CHANNEL RF Power FET with 120V DS Breakdown Voltage. It operates in S BAND, featuring Gallium Nitride technology for high electron mobility. Ideal for amplifier applications, it has a ceramic-metal-sealed co-fired package and gold over nickel terminal finish.
A2T18S261W12NR3 by NXP Semiconductors

A2T18S261W12NR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Terminal Finish: TIN;
934065607112 by NXP Semiconductors

934065607112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Case Connection: SOURCE; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
DE275-501N16A by IXYS Corporation

DE275-501N16A

IXYS Corporation

DE275-501N16A by IXYS Corp is a N-channel RF Power FET with 500V DS breakdown voltage, 16A max drain current, and operates in the VHF band. It is used for switching applications in enhancement mode, featuring a plastic/epoxy package and isolated case connection.
BLF246 by New Jersey Semiconductor Products

BLF246

New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 65 V; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
CGHV31500F1 by Wolfspeed

CGHV31500F1

Wolfspeed

RF Power Field-Effect Transistors;
LET9060 by STMicroelectronics

LET9060

STMicroelectronics

LET9060 by STMicroelectronics is an N-CHANNEL RF Power FET with 80V DS Breakdown Voltage. It operates in ULTRA HIGH FREQUENCY BAND, ideal for AMPLIFIER applications. Featuring a 12A ID and GULL WING terminals, it's a SINGLE configuration transistor in PLASTIC/EPOXY package.
934061129112 by NXP Semiconductors

934061129112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON; Case Connection: SOURCE;
BLF571,112 by Ampleon Netherlands B V

BLF571,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Peak Reflow Temperature (C): 245; Moisture Sensitivity Level (MSL): 1;
PD85006-E by STMicroelectronics

PD85006-E

STMicroelectronics

PD85006-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 2 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This compact surface mount device ensures efficient performance with a max power dissipation of 36.5 W.
MRFE6VP5300NR1 by Freescale Semiconductor

MRFE6VP5300NR1

Freescale Semiconductor

RF Power Field-Effect Transistors; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3;
MRF300AN-13MHZ by NXP Semiconductors

MRF300AN-13MHZ

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
A2T21H141W24SR3 by NXP Semiconductors

A2T21H141W24SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
MRF181SR1 by Onsemi

MRF181SR1

Onsemi

MRF181SR1 by Onsemi is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, ideal for AMPLIFIER applications. This SINGLE configuration FET has a max ID of 2A and comes in a CERAMIC, METAL-SEALED COFIRED package.
PD57006STR-E by STMicroelectronics

PD57006STR-E

STMicroelectronics

PD57006STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 1 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance up to 150 °C.