NXP Semiconductors - BLF202,115

BLF202,115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF202,115
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 5.7 W; No. of Terminals: 8; Terminal Form: GULL WING;
Datasheet BLF202,115 Datasheet
In Stock3,688
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 1 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 5.7 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-CDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: VERY HIGH FREQUENCY BAND
Maximum Operating Temperature: 200 Cel
Minimum Power Gain (Gp): 10 dB
Other Names: BLF202 T/R-ND
568-2410-6
934055627115
568-2410-2
BLF202 T/R
568-2410-1
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 40 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 1 A
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