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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BLF202,115 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 5.7 W; No. of Terminals: 8; Terminal Form: GULL WING; |
| Datasheet | BLF202,115 Datasheet |
| In Stock | 191 |
| NAME | DESCRIPTION |
|---|---|
| Minimum Power Gain (Gp): | 10 dB |
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | 1 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 8 |
| Minimum DS Breakdown Voltage: | 40 V |
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | 5.7 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-CDSO-G8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | VERY HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 200 Cel |
| Maximum Drain Current (Abs) (ID): | 1 A |
