NXP Semiconductors - BLF2324M8LS200P

  1. Home
  2. NXP Semiconductors - BLF2324M8LS200P
BLF2324M8LS200P by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF2324M8LS200P
Description RF Power Field-Effect Transistors;
Datasheet BLF2324M8LS200P Datasheet
In Stock193
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
193 - -

Popular Products

Category Top Products

A5G38H055NT4 by NXP Semiconductors

A5G38H055NT4

NXP Semiconductors

RF Power Field-Effect Transistors;
RF5L051K5CB4 by STMicroelectronics

RF5L051K5CB4

STMicroelectronics

RF Power Field-Effect Transistors;
A2T20H330W24SR6 by NXP Semiconductors

A2T20H330W24SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
A2G22S251-01SR3 by NXP Semiconductors

A2G22S251-01SR3

NXP Semiconductors

NXP Semiconductors A2G22S251-01SR3 is an N-CHANNEL RF Power FET with 150V DS Breakdown Voltage, 16.2 dB Power Gain for AMPLIFIER applications in S BAND. It operates in DEPLETION MODE, made of GALLIUM NITRIDE with max temp of 225°C and min temp of -55°C, suitable for surface mount with METAL-OXIDE SEMICONDUCTOR technology.
MRF171A by M/a-com Technology Solutions

MRF171A

M/a-com Technology Solutions

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; Maximum Operating Temperature: 200 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
AFT20P060-4NR3 by Freescale Semiconductor

AFT20P060-4NR3

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: Matte Tin (Sn);
A3T21H450W23SR6 by NXP Semiconductors

A3T21H450W23SR6

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum Power Gain (Gp): 14.2 dB; Minimum Operating Temperature: -40 Cel;
A2T21S260W12NR3 by NXP Semiconductors

A2T21S260W12NR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Terminal Finish: TIN;
A2T21H141W24SR3 by NXP Semiconductors

A2T21H141W24SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
BLF278,112 by NXP Semiconductors

BLF278,112

NXP Semiconductors

The NXP Semiconductors BLF278,112 is an N-CHANNEL RF Power FET with 125V DS Breakdown Voltage and 20dB Power Gain. Commonly used in amplifiers for Very High Frequency applications, it features a max power dissipation of 500W and operates at up to 200°C.
AFT05MS031NR1 by Freescale Semiconductor

AFT05MS031NR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 294 W; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
A5G35S004N-3400 by NXP Semiconductors

A5G35S004N-3400

NXP Semiconductors

RF Power Field-Effect Transistors;
MRF101AN by NXP Semiconductors

MRF101AN

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
PD84006-E by STMicroelectronics

PD84006-E

STMicroelectronics

PD84006-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact device supports surface mount technology with a max temp of 165 °C.
STAP57045 by STMicroelectronics

STAP57045

STMicroelectronics

STAP57045 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 73 W.
PD57045S by STMicroelectronics

PD57045S

STMicroelectronics

STMicroelectronics PD57045S is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It has a max Drain Current of 5A, operates in ENHANCEMENT MODE, and can withstand temperatures up to 165 °C.
LET9060C by STMicroelectronics

LET9060C

STMicroelectronics

LET9060C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 12 A, breakdown voltage of 80 V, and operates in the ultra-high frequency band. Its robust design supports high power dissipation up to 118 W.
A3G20S350-01SR3 by NXP Semiconductors

A3G20S350-01SR3

NXP Semiconductors

NXP Semiconductors A3G20S350-01SR3 is an N-CHANNEL RF FET with 125V DS Breakdown Voltage, 17dB Power Gain, and GaN Element. Ideal for S Band applications, this DEPLETION MODE transistor operates from -55°C to 225°C in AMPLIFIER circuits.
MRFE6VP5300NR1 by NXP Semiconductors

MRFE6VP5300NR1

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: TIN;
934065695112 by NXP Semiconductors

934065695112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Position: DUAL; Transistor Element Material: SILICON; No. of Terminals: 4;