BLF245B,112 by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BLF245B,112
Description	N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Power Dissipation Ambient: 75 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	BLF245B,112 Datasheet
In Stock	480

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMMON SOURCE, 2 ELEMENTS
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	4.5 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	4
Maximum Power Dissipation (Abs):	75 W
Terminal Position:	DUAL
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-CDFM-F4
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	VERY HIGH FREQUENCY BAND
Maximum Operating Temperature:	200 Cel
Case Connection:	SOURCE
Maximum Power Dissipation Ambient:	75 W
Maximum Drain-Source On Resistance:	1.5 ohm
Minimum Power Gain (Gp):	14 dB
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	65 V
Qualification:	Not Qualified
Additional Features:	HIGH RELIABILITY
Maximum Drain Current (Abs) (ID):	4.5 A
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
480	-	-

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