NXP Semiconductors - BLF378

BLF378 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF378
Description N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation Ambient: 500 W; Minimum Power Gain (Gp): 14 dB; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet BLF378 Datasheet
In Stock154
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: COMMON SOURCE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 18 A
Surface Mount: YES
No. of Terminals: 4
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: VERY HIGH FREQUENCY BAND
Maximum Operating Temperature: 200 Cel
Case Connection: SOURCE
Maximum Power Dissipation Ambient: 500 W
Maximum Drain-Source On Resistance: .3 ohm
Minimum Power Gain (Gp): 14 dB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 110 V
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY
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