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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BLF3G21-6,135 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 2.3 A; Maximum Operating Temperature: 200 Cel; Maximum Drain Current (Abs) (ID): 2.3 A; |
| Datasheet | BLF3G21-6,135 Datasheet |
| In Stock | 3,100 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: | 934058477135 |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 200 Cel |
| Maximum Drain Current (ID): | 2.3 A |
| Maximum Drain Current (Abs) (ID): | 2.3 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |









