NXP Semiconductors - BLF4G22S-100,112

  1. Home
  2. NXP Semiconductors - BLF4G22S-100,112
BLF4G22S-100,112 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF4G22S-100,112
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Qualification: Not Qualified; No. of Elements: 1;
Datasheet BLF4G22S-100,112 Datasheet
In Stock2,890
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 12 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 65 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): FLATPACK
JESD-30 Code: R-CDFP-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 200 Cel
Maximum Drain Current (Abs) (ID): 12 A
Case Connection: SOURCE
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,890 - -

Popular Products

Category Top Products

CGHV1F006S by Wolfspeed

CGHV1F006S

Wolfspeed

CGHV1F006S by Wolfspeed is an N-CHANNEL RF Power FET with a 100V DS Breakdown Voltage. Ideal for KU BAND applications, it features Gallium Nitride technology, 0.95A Drain Current, and operates in DEPLETION MODE. This SMALL OUTLINE transistor has 12 terminals and is suitable for AMPLIFIER use.
AFT27S006NT1 by Freescale Semiconductor

AFT27S006NT1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 3; Package Shape: RECTANGULAR; Terminal Position: DUAL;
EGNC210MK by Sumitomo Electric Industries

EGNC210MK

Sumitomo Electric Industries

Sumitomo Electric Industries' EGNC210MK is an N-CHANNEL RF FET with 160V DS breakdown voltage. Ideal for ultra high frequency band applications, it features a gallium nitride element and operates in depletion mode. The package is ceramic-metal sealed co-fired, with a rectangular shape and flange mount style.
MRF7P20040HSR3 by Freescale Semiconductor

MRF7P20040HSR3

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; No. of Elements: 2;
PD57060STR-E by STMicroelectronics

PD57060STR-E

STMicroelectronics

PD57060STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface mount transistor ensures efficient performance in demanding environments.
BLF147 by Ampleon Netherlands B V

BLF147

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 65 V; Terminal Form: FLAT;
CGH40120F by Wolfspeed

CGH40120F

Wolfspeed

CGH40120F by Wolfspeed is an N-CHANNEL RF Power FET with 120V DS Breakdown Voltage. It operates in S BAND, ideal for AMPLIFIER applications. Featuring GALLIUM NITRIDE technology, it has a max temp of 150°C and can operate from -40 to 150°C.
A2T20H160W04NR3 by NXP Semiconductors

A2T20H160W04NR3

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40; Package Body Material: PLASTIC/EPOXY;
PD20010-E by STMicroelectronics

PD20010-E

STMicroelectronics

PD20010-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 40 V, and operates in the L band. This compact device supports surface mount technology for efficient integration.
BLP15H9S100GZ by Ampleon Netherlands B V

BLP15H9S100GZ

Ampleon Netherlands B V

BLP15H9S100GZ by Ampleon Netherlands B V is an N-CHANNEL RF FET with 106V DS Breakdown Voltage and 18dB Power Gain, ideal for AMPLIFIER applications in L BAND. It features GULL WING terminals, METAL-OXIDE SEMICONDUCTOR tech, and operates in ENHANCEMENT MODE up to 225°C.
LET8180 by STMicroelectronics

LET8180

STMicroelectronics

LET8180 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 18 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its robust design supports high power dissipation up to 289 W.
BLF3G21-30,112 by NXP Semiconductors

BLF3G21-30,112

NXP Semiconductors

NXP Semiconductors' BLF3G21-30,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a max Drain Current of 4.5A and operates in ENHANCEMENT MODE at up to 200°C.
A3G22H400-04SR3 by NXP Semiconductors

A3G22H400-04SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: GALLIUM NITRIDE; Minimum Operating Temperature: -55 Cel; Terminal Form: FLAT;
MRF5P21180 by Motorola

MRF5P21180

Motorola

MRF5P21180 by Motorola is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, operating in S BAND. It has a power dissipation of 437.5W and operates at up to 200°C. Commonly used as an amplifier in high-frequency applications due to its dual-element configuration and metal-oxide semiconductor technology.
BLP10H610Z by Ampleon Netherlands B V

BLP10H610Z

Ampleon Netherlands B V

BLP10H610Z by Ampleon Netherlands B V is an N-CHANNEL RF Power FET with a PLASTIC/EPOXY package. It operates in ENHANCEMENT MODE, suitable for AMPLIFIER applications in L BAND frequencies. With 104V DS Breakdown Voltage and max temp of 150°C, it features a COMMON SOURCE configuration and METAL-OXIDE SEMICONDUCTOR technology.
SD2931-12MR by STMicroelectronics

SD2931-12MR

STMicroelectronics

SD2931-12MR by STMicroelectronics is a N-CHANNEL RF Power FET with 125V DS Breakdown Voltage, suitable for Very High Frequency Band applications. Featuring a max ID of 20A and an operating mode of Enhancement Mode, this transistor has a flange mount package style and flat terminal form for easy installation in various RF power applications.
934061138112 by NXP Semiconductors

934061138112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 8.2 A; Terminal Position: DUAL; Terminal Form: FLAT;
MRF6S20010NR1 by Freescale Semiconductor

MRF6S20010NR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Terminal Position: DUAL;
MW6S010NR1 by NXP Semiconductors

MW6S010NR1

NXP Semiconductors

The NXP Semiconductors MW6S010NR1 is a single-channel RF Power FET with 68V DS breakdown voltage, ideal for amplifier applications in L Band frequencies. Featuring a max power dissipation of 61.4W and operating temperature up to 225°C, this enhancement mode transistor has a plastic/epoxy package body and tin terminal finish for surface mount assembly.
LET9060 by STMicroelectronics

LET9060

STMicroelectronics

LET9060 by STMicroelectronics is an N-CHANNEL RF Power FET with 80V DS Breakdown Voltage. It operates in ULTRA HIGH FREQUENCY BAND, ideal for AMPLIFIER applications. Featuring a 12A ID and GULL WING terminals, it's a SINGLE configuration transistor in PLASTIC/EPOXY package.