NXP Semiconductors - BLF522

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BLF522 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF522
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
Datasheet BLF522 Datasheet
In Stock194
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 1.8 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
No. of Terminals: 6
Maximum Power Dissipation (Abs): 20 W
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 200 Cel
Case Connection: ISOLATED
Maximum Power Dissipation Ambient: 20 W
Maximum Drain-Source On Resistance: 2.7 ohm
Minimum Power Gain (Gp): 10 dB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 40 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 1.8 A
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