NXP Semiconductors - BLF546

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BLF546 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF546
Description N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Application: AMPLIFIER; Maximum Drain Current (ID): 9 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
Datasheet BLF546 Datasheet
In Stock137
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMMON SOURCE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 9 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 4
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 200 Cel
Case Connection: SOURCE
Maximum Power Dissipation Ambient: 145 W
Maximum Drain-Source On Resistance: .6 ohm
Moisture Sensitivity Level (MSL): NOT APPLICABLE
Minimum Power Gain (Gp): 11 dB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 65 V
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY
Maximum Drain Current (Abs) (ID): 9 A
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
137 $66.000 $9,042.000

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