NXP Semiconductors - BLF6G10LS-135R,118

  1. Home
  2. NXP Semiconductors - BLF6G10LS-135R,118
BLF6G10LS-135R,118 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF6G10LS-135R,118
Description RF Power Field-Effect Transistors; Surface Mount: YES; Terminal Form: FLAT; Package Shape: RECTANGULAR; JESD-30 Code: R-CDFP-F2; No. of Terminals: 2;
Datasheet BLF6G10LS-135R,118 Datasheet
In Stock317
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
No. of Terminals: 2
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): FLATPACK
JESD-30 Code: R-CDFP-F2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Maximum Operating Temperature: 225 Cel
Surface Mount: YES
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
317 - -

Popular Products

Category Top Products

A3T19H455W23SR6 by NXP Semiconductors

A3T19H455W23SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
A3G20S250-01SR3 by NXP Semiconductors

A3G20S250-01SR3

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: DEPLETION MODE; Peak Reflow Temperature (C): 260; Terminal Form: FLAT;
BLF6G27S-45,112 by NXP Semiconductors

BLF6G27S-45,112

NXP Semiconductors

NXP Semiconductors' BLF6G27S-45,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in S BAND with 20A Drain Current for AMPLIFIER applications. The METAL-OXIDE SEMICONDUCTOR technology and ENHANCEMENT MODE make it suitable for high-frequency amplification needs.
BLF3G21-30,112 by NXP Semiconductors

BLF3G21-30,112

NXP Semiconductors

NXP Semiconductors' BLF3G21-30,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a max Drain Current of 4.5A and operates in ENHANCEMENT MODE at up to 200°C.
PD55003S by STMicroelectronics

PD55003S

STMicroelectronics

STMicroelectronics PD55003S is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It has a max Drain Current of 2.5A and can handle up to 31.7W Power Dissipation at 165°C operating temperature.
SD57060 by STMicroelectronics

SD57060

STMicroelectronics

SD57060 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in various electronic devices.
2SK3075(TE12L,Q) by Toshiba

2SK3075(TE12L,Q)

Toshiba

RF Power Field-Effect Transistors;
PD85025TR-E by STMicroelectronics

PD85025TR-E

STMicroelectronics

PD85025TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This compact surface mount transistor ensures efficient performance up to 165 °C.
MRF8S21200HSR6 by NXP Semiconductors

MRF8S21200HSR6

NXP Semiconductors

NXP Semiconductors' MRF8S21200HSR6 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in S BAND, featuring COMMON SOURCE configuration for AMPLIFIER applications. The transistor has a max operating temperature of 225°C and comes in a FLATPACK package style.
RF5L15120CB4 by STMicroelectronics

RF5L15120CB4

STMicroelectronics

RF Power Field-Effect Transistors;
CGH40025F by Wolfspeed

CGH40025F

Wolfspeed

CGH40025F by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage, ideal for C Band applications. Featuring Gallium Nitride technology, it operates in Enhancement Mode at up to 175°C. This single configuration transistor has a ceramic-metal-sealed co-fired package and is surface mountable.
A2T14H450-23NR6 by NXP Semiconductors

A2T14H450-23NR6

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Minimum Operating Temperature: -40 Cel; Transistor Application: AMPLIFIER; Highest Frequency Band: L BAND;
A2T18H100-25SR3 by NXP Semiconductors

A2T18H100-25SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
MW6S010GNR1 by Freescale Semiconductor

MW6S010GNR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61.4 W; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PDSO-G2;
BLF861 by NXP Semiconductors

BLF861

NXP Semiconductors

BLF861 by NXP is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features COMMON SOURCE configuration, 18A ID, and METAL-OXIDE SEMICONDUCTOR technology in a CERAMIC package with FLANGE MOUNT style.
934065321118 by NXP Semiconductors

934065321118

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MRFE6VP61K25HR6 by NXP Semiconductors

MRFE6VP61K25HR6

NXP Semiconductors

NXP Semiconductors' MRFE6VP61K25HR6 is an N-CHANNEL RF Power FET with 125V DS Breakdown Voltage, operating in the Ultra High Frequency Band. It features a Common Source configuration, 1300W Max Power Dissipation, and is ideal for AMPLIFIER applications. This CERAMIC/METAL-SEALED COFIRED transistor has a RECTANGULAR package shape and operates in ENHANCEMENT MODE at up to 225°C.
VRF2933 by Microsemi

VRF2933

Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: ROUND; Terminal Form: FLAT; Qualification: Not Qualified;
TIM3742-8UL by Toshiba

TIM3742-8UL

Toshiba

Toshiba's TIM3742-8UL is an N-channel RF Power FET with a 15V DS breakdown voltage, ideal for amplifier applications in the C band. Featuring a single configuration, it has a max drain current of 7A and operates in depletion mode. With a package style of flange mount and metal-oxide semiconductor technology, it offers high power dissipation up to 37.5W at a max temp of 175°C.
BLF175 by Asi Semiconductor

BLF175

Asi Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; Maximum Drain Current (Abs) (ID): 4 A; Maximum Drain Current (ID): 4 A;