NXP Semiconductors - BLF6G21-10

  1. Home
  2. NXP Semiconductors - BLF6G21-10
BLF6G21-10 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF6G21-10
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 225 Cel; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet BLF6G21-10 Datasheet
In Stock69
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 225 Cel
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
69 - -

Popular Products

Category Top Products

934009000215 by NXP Semiconductors

934009000215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-236AB;
FLU17XM by Eudyna Devices

FLU17XM

Eudyna Devices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; No. of Elements: 1; Additional Features: HIGH RELIABILITY;
934063138215 by NXP Semiconductors

934063138215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: JUNCTION; Terminal Form: GULL WING; JEDEC-95 Code: TO-236AB;
BF510-TAPE-7 by NXP Semiconductors

BF510-TAPE-7

NXP Semiconductors

BF510-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 20V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This surface-mount transistor ensures reliable performance up to 150 °C.
STAC150V2-350E by STMicroelectronics

STAC150V2-350E

STMicroelectronics

RF Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BLA8G1011L-300 by NXP Semiconductors

BLA8G1011L-300

NXP Semiconductors

RF Small Signal Field-Effect Transistors;
ATF-36163-TR1G by Broadcom

ATF-36163-TR1G

Broadcom

Broadcom's ATF-36163-TR1G is an N-channel RF FET for amplifier applications. With a power gain of 9.4 dB, it operates in depletion mode up to 150°C. This GaAs transistor has a max drain current of 0.04 A and is designed for Ku band frequencies.
BF245C by Baneasa S A

BF245C

Baneasa S A

RF Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; No. of Elements: 1; Qualification: Not Qualified;
BF245ARL1 by Onsemi

BF245ARL1

Onsemi

BF245ARL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
934055136115 by NXP Semiconductors

934055136115

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; No. of Terminals: 4; Maximum Feedback Capacitance (Crss): .035 pF; Package Body Material: PLASTIC/EPOXY;
BLS7G2730L-200P by NXP Semiconductors

BLS7G2730L-200P

NXP Semiconductors

RF Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
ATF-38143-BLKG by Broadcom

ATF-38143-BLKG

Broadcom

Broadcom ATF-38143-BLKG is a N-CHANNEL FET for X BAND applications. Features 15 dB Gp, 4.5 V DS Breakdown Voltage, and 0.58 W Power Dissipation. Ideal for RF AMPLIFIER circuits with DEPLETION MODE operation in SMALL OUTLINE package.
ATF-521P8-BLK by Agilent Technologies

ATF-521P8-BLK

Agilent Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Highest Frequency Band: C BAND; JESD-30 Code: S-PDSO-N8;
BF556AT/R by NXP Semiconductors

BF556AT/R

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Operating Mode: DEPLETION MODE; JEDEC-95 Code: TO-236AB;
BF1100,215 by NXP Semiconductors

BF1100,215

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 14 V;
2N5484ZL1 by Onsemi

2N5484ZL1

Onsemi

2N5484ZL1 by Onsemi is an N-CHANNEL RF FET with 16 dB Gp for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a max ID of 0.03 A and Crss of 1 pF. This JUNCTION FET operates in the ULTRA HIGH FREQUENCY BAND with a CYLINDRICAL package shape.
BF909WR-T by NXP Semiconductors

BF909WR-T

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Position: DUAL; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;
BF245BRLRA by Onsemi

BF245BRLRA

Onsemi

BF245BRLRA by Onsemi is an N-CHANNEL RF FET with a 30V DS breakdown voltage. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a SINGLE configuration and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
BF510-TAPE-13 by NXP Semiconductors

BF510-TAPE-13

NXP Semiconductors

BF510-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 20V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.
MMBF4416LT1G by Onsemi

MMBF4416LT1G

Onsemi

MMBF4416LT1G by Onsemi is an N-CHANNEL RF FET with 30V DS breakdown voltage and 10dB power gain, ideal for amplifier applications. It operates in depletion mode at ultra-high frequencies, with a max power dissipation of 0.225W. The transistor features a gull wing terminal form and tin finish, suitable for surface mount configurations in small outline packages.