NXP Semiconductors - BLF7G10L-250,112

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BLF7G10L-250,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF7G10L-250,112
Description N-CHANNEL; Configuration: SINGLE; Maximum Drain Current (ID): 56 A; Maximum Drain Current (Abs) (ID): 56 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 225 Cel;
Datasheet BLF7G10L-250,112 Datasheet
In Stock4,851
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 225 Cel
Maximum Drain Current (ID): 56 A
Maximum Drain Current (Abs) (ID): 56 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
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Pricing (USD)

Qty. Unit Price Ext. Price
4,851 $106.850 $518,329.350

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