NXP Semiconductors - BLF7G21LS-160P,112

BLF7G21LS-160P,112 by NXP Semiconductors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BLF7G21LS-160P,112
Description	N-CHANNEL; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 200 Cel; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 32.5 A;
Datasheet	BLF7G21LS-160P,112 Datasheet
In Stock	1,164

BLF7G21LS-160P,112 Technical Details

NAME	DESCRIPTION
Maximum Time At Peak Reflow Temperature (s):	30
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	200 Cel
Maximum Drain Current (ID):	32.5 A
Maximum Drain Current (Abs) (ID):	32.5 A
Sub-Category:	FET General Purpose Power
Peak Reflow Temperature (C):	260
Polarity or Channel Type:	N-CHANNEL

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,164	$90.100	$104,876.400

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