NXP Semiconductors - BLF7G22L-250P,118

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BLF7G22L-250P,118 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF7G22L-250P,118
Description N-CHANNEL; Maximum Drain Current (Abs) (ID): 65 A; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 65 A; Maximum Operating Temperature: 200 Cel;
Datasheet BLF7G22L-250P,118 Datasheet
In Stock172
NAME DESCRIPTION
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 200 Cel
Maximum Drain Current (ID): 65 A
Maximum Drain Current (Abs) (ID): 65 A
Sub-Category: FET General Purpose Powers
Polarity or Channel Type: N-CHANNEL
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