NXP Semiconductors - BLF7G22LS-250P,112

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BLF7G22LS-250P,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF7G22LS-250P,112
Description N-CHANNEL; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 200 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 65 A; Maximum Drain Current (ID): 65 A;
Datasheet BLF7G22LS-250P,112 Datasheet
In Stock3,173
NAME DESCRIPTION
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 200 Cel
Maximum Drain Current (ID): 65 A
Maximum Drain Current (Abs) (ID): 65 A
Sub-Category: FET General Purpose Powers
Polarity or Channel Type: N-CHANNEL
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Pricing (USD)

Qty. Unit Price Ext. Price
3,173 $121.100 $384,250.300

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