Image shown is a representation only.
| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BLF7G27L-200PB,118 |
| Description | N-CHANNEL; Maximum Drain Current (ID): 48 A; Maximum Operating Temperature: 200 Cel; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | BLF7G27L-200PB,118 Datasheet |
| In Stock | 1,205 |
| NAME | DESCRIPTION |
|---|---|
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 200 Cel |
| Maximum Drain Current (ID): | 48 A |
| Maximum Drain Current (Abs) (ID): | 48 A |
| Sub-Category: | FET General Purpose Power |
| Peak Reflow Temperature (C): | 260 |
| Polarity or Channel Type: | N-CHANNEL |









