NXP Semiconductors - BLF7G27L-75P,112

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BLF7G27L-75P,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF7G27L-75P,112
Description N-CHANNEL; Maximum Time At Peak Reflow Temperature (s): 30; Maximum Drain Current (Abs) (ID): 18 A; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 18 A;
Datasheet BLF7G27L-75P,112 Datasheet
In Stock164
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 225 Cel
Maximum Drain Current (ID): 18 A
Maximum Drain Current (Abs) (ID): 18 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): 260
Polarity or Channel Type: N-CHANNEL
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