NXP Semiconductors - BLF8G10LS-300P

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BLF8G10LS-300P by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF8G10LS-300P
Description N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Shape: RECTANGULAR; Package Style (Meter): FLATPACK; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet BLF8G10LS-300P Datasheet
In Stock83
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: COMMON SOURCE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 65 V
Terminal Position: DUAL
Package Style (Meter): FLATPACK
JESD-30 Code: R-CDFP-F4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Reference Standard: IEC-60134
Case Connection: SOURCE
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