NXP Semiconductors - BLL6H1214-500,112

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BLL6H1214-500,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLL6H1214-500,112
Description N-CHANNEL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 45 A; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 200 Cel; Maximum Drain Current (Abs) (ID): 45 A;
Datasheet BLL6H1214-500,112 Datasheet
In Stock104
NAME DESCRIPTION
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 200 Cel
Maximum Drain Current (ID): 45 A
Maximum Drain Current (Abs) (ID): 45 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
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