NXP Semiconductors - BLM6G22-30

  1. Home
  2. NXP Semiconductors - BLM6G22-30
BLM6G22-30 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLM6G22-30
Description NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Screening Level: IEC-60134;
Datasheet BLM6G22-30 Datasheet
In Stock4,447
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 2100 MHz
Terminal Finish: TIN
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
Maximum Voltage Standing Wave Ratio: 5
No. of Terminals: 16
Screening Level: IEC-60134
Technology: LDMOS
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 200 Cel
Maximum Operating Frequency: 2200 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Gain: 27.5 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,447 - -

Popular Products

Category Top Products

XL1000-BD-000V by Mimix Broadband

XL1000-BD-000V

Mimix Broadband

WIDE BAND LOW POWER; Gain: 12 dB; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT; Maximum Operating Frequency: 40000 MHz; Additional Features: LOW NOISE;
A2I09VD015NR1 by NXP Semiconductors

A2I09VD015NR1

NXP Semiconductors

WIDE BAND LOW POWER; Terminal Finish: TIN; JESD-609 Code: e3;
SPF5043ZSQ by Qorvo

SPF5043ZSQ

Qorvo

SPF5043ZSQ by Qorvo is a GAAS RF amplifier with 11.4 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 25 dBm and operates at temperatures ranging from -40°C to 85°C. Ideal for wideband low-power applications requiring surface mount technology.
MAX2691EWS+T by Analog Devices

MAX2691EWS+T

Analog Devices

MAX2691EWS+T by Analog Devices is a BICMOS RF amplifier with 13.1 dB gain, operating at 1.8/3.3V. It is a wide band low power device suitable for surface mount applications in RF & Microwave systems, offering a characteristic impedance of 50 ohm and temperature range from -40 to 85°C.
HMC635LC4 by Hittite Microwave

HMC635LC4

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Package Equivalence Code: LCC24,.16SQ,20;
HMC960LP4ETR by Hittite Microwave

HMC960LP4ETR

Hittite Microwave

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Additional Features: LOW NOISE;
HMC505LP4E by Analog Devices

HMC505LP4E

Analog Devices

Analog Devices' HMC505LP4E is a RF amplifier with 50 ohm impedance, operating frequency range of 6800-7400 MHz, and VSWR of 2. Ideal for narrowband low-power applications in temperatures from -40 to 85°C. Package: PLASTIC/EPOXY, Technology: BIPOLAR, Mounting: SURFACE MOUNT.
HMC1114PM5ETR by Analog Devices

HMC1114PM5ETR

Analog Devices

Analog Devices' HMC1114PM5ETR is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high power amplification in the RF & Microwave field. The component features a surface mount package body material made of plastic/epoxy, with a max supply current of 150 mA at 28V.
MMZ09332BT1 by NXP Semiconductors

MMZ09332BT1

NXP Semiconductors

NXP Semiconductors' MMZ09332BT1 is a narrow band medium power RF amplifier with 28.7 dB gain and 29 dBm max input power. Operating from 130 MHz to 1000 MHz, it's ideal for applications requiring high-frequency amplification in RF and microwave systems.
HMC392ALC4 by Analog Devices

HMC392ALC4

Analog Devices

HMC392ALC4 by Analog Devices is a RF & Microwave Amplifier with 20 dBm CW input power, 14.5 dB gain, and 3500-8000 MHz frequency range. It operates at temperatures from -40 to 85°C and requires a 5V power supply. Ideal for wideband low-power applications due to its GaAs technology and surface mounting feature.
HMC752LC4TR by Hittite Microwave

HMC752LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
RA18H1213G-101 by Mitsubishi Electric

RA18H1213G-101

Mitsubishi Electric

The Mitsubishi Electric RA18H1213G-101 is a RF amplifier module with 23 dB gain, operating b/w 1240-1300 MHz. It has a max input power of 24.77 dBm and VSWR of 3, suitable for narrowband high-power applications. With hybrid technology and operating temperatures from -30 to 110°C, it's ideal for various RF and microwave systems.
TQP7M9105 by Triquint Semiconductor

TQP7M9105

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 1500 MHz; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 50 MHz;
RF3827SR by Qorvo

RF3827SR

Qorvo

Qorvo's RF3827SR is a GaAs wide band medium power amplifier with 16 terminals, operating b/w -40°C to 85°C. It requires an 8V power supply and draws a max current of 130mA. Ideal for surface mount applications in RF & microwave systems.
HMC478MP86ETR by Analog Devices

HMC478MP86ETR

Analog Devices

Analog Devices' HMC478MP86ETR is a wide band low power RF amplifier with 5V power supply, operating from -40°C to 85°C. This bipolar technology device has 4 terminals and surface mounting feature, making it ideal for RF & microwave applications requiring high performance in a compact package.
SPF5122ZSR by Qorvo

SPF5122ZSR

Qorvo

Qorvo's SPF5122ZSR is a GAAS RF amplifier with 11.2 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 27 dBm and operates at temperatures ranging from -40°C to 85°C. Ideal for wideband medium-power applications, it features a surface-mount package with matte tin terminals.
SBB5089Z by Qorvo

SBB5089Z

Qorvo

Qorvo's SBB5089Z is a GAAS RF amplifier with 14.5 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 24 dBm and requires a 5V power supply. Ideal for wideband low-power applications in RF and microwave systems.
MGA-81563-TR1 by Broadcom

MGA-81563-TR1

Broadcom

Broadcom's MGA-81563-TR1 is a GAAS RF amplifier with 10.5 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 13 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package, operates at temperatures b/w -40°C to 85°C, and requires a 3V power supply.
NPA1006A-TR0500 by M/a-com Technology Solutions

NPA1006A-TR0500

M/a-com Technology Solutions

NPA1006A-TR0500 by M/a-com: RF amplifier with 12.5dB gain, 20-1000MHz frequency range, and 50 ohm impedance. Ideal for wideband high-power applications in temperatures from -40 to 85°C. Package material is plastic/epoxy, suitable for surface mount installation with 8 terminals.
MAX2839ETN+T by Maxim Integrated

MAX2839ETN+T

Maxim Integrated

NARROW BAND LOW POWER; Terminal Finish: MATTE TIN; JESD-609 Code: e3;