NXP Semiconductors - BLP8G05S-200G

  1. Home
  2. NXP Semiconductors - BLP8G05S-200G
BLP8G05S-200G by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLP8G05S-200G
Description RF Power Field-Effect Transistors;
Datasheet BLP8G05S-200G Datasheet
In Stock2,353
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,353 - -

Popular Products

Category Top Products

CG2H40045P by Wolfspeed

CG2H40045P

Wolfspeed

CG2H40045P by Wolfspeed is an N-CHANNEL RF Power FET with 84V DS Breakdown Voltage. Featuring 15dB Power Gain, it operates in S BAND for AMPLIFIER applications. Utilizing GALLIUM NITRIDE tech, it has a max ID of 6A and can withstand temps from -40 to 150 °C.
SD3933 by STMicroelectronics

SD3933

STMicroelectronics

SD3933 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 20 A, a breakdown voltage of 250 V, and can dissipate up to 648 W. Ideal for high-performance RF amplifiers, it operates efficiently in enhancement mode.
934064594118 by NXP Semiconductors

934064594118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; No. of Elements: 1; Transistor Element Material: SILICON;
RD15HVF1 by Mitsubishi Electric

RD15HVF1

Mitsubishi Electric

RD15HVF1 by Mitsubishi Electric is an N-CHANNEL RF Power FET with a 30V DS Breakdown Voltage, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It has a max Drain Current of 4A, power dissipation of 48W, and operates in ENHANCEMENT MODE at up to 150°C temperature.
MRF136Y by New Jersey Semiconductor Products

MRF136Y

New Jersey Semiconductor Products

N-CHANNEL; Minimum DS Breakdown Voltage: 65 V; Transistor Element Material: SILICON; Maximum Drain Current (ID): 5 A; No. of Elements: 2; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
CGH55030F2 by Wolfspeed

CGH55030F2

Wolfspeed

CGH55030F2 by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage. It operates in the C BAND frequency range and features Gallium Nitride technology. Ideal for amplifier applications, this transistor has a ceramic-metal-sealed co-fired package and is surface mountable.
MRFE6VP61K25HR5 by Freescale Semiconductor

MRFE6VP61K25HR5

Freescale Semiconductor

N-CHANNEL; Maximum Power Dissipation (Abs): 1300 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): 40; Maximum Operating Temperature: 225 Cel; Peak Reflow Temperature (C): 260;
LET9045TR by STMicroelectronics

LET9045TR

STMicroelectronics

LET9045TR by STMicroelectronics is an N-channel RF power FET designed for amplification in ultra-high frequency applications. It features a max drain current of 9 A, breakdown voltage of 80 V, and operates at up to 165 °C. Its compact surface mount design ensures efficient performance in various electronic devices.
D2225UK by Tt Electronics Plc

D2225UK

Tt Electronics Plc

D2225UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with 2 elements in a COMMON SOURCE configuration. It operates in the ULTRA HIGH FREQUENCY BAND, with a max ID of 4A and VDS of 40V. Ideal for AMPLIFIER applications, this transistor has GULL WING terminals and can withstand up to 200°C operating temperature.
LET20030S by STMicroelectronics

LET20030S

STMicroelectronics

LET20030S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max power dissipation of 140 W, a breakdown voltage of 65 V, and operates in the L band. This compact device excels in high-frequency performance with enhanced mode operation.
BLF888D by NXP Semiconductors

BLF888D

NXP Semiconductors

RF Power Field-Effect Transistors;
PD55015-E by STMicroelectronics

PD55015-E

STMicroelectronics

STMicroelectronics' PD55015-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, it offers 5A Drain Current and 73W Power Dissipation. The transistor features GULL WING terminals, METAL-OXIDE SEMICONDUCTOR tech, and can withstand up to 165°C operating temp.
SD2921 by STMicroelectronics

SD2921

STMicroelectronics

SD2921 by STMicroelectronics is an N-CHANNEL RF Power FET with 125V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, with a max ID of 16A and power dissipation of 219W. Ideal for high-power applications requiring efficient signal amplification in radial terminal configurations.
934064593112 by NXP Semiconductors

934064593112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 28 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: AMPLIFIER;
PD57030 by STMicroelectronics

PD57030

STMicroelectronics

PD57030 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
MRF151G by Motorola

MRF151G

Motorola

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Highest Frequency Band: VERY HIGH FREQUENCY BAND; JESD-30 Code: R-CDFM-F4;
FLL177ME by Fujitsu

FLL177ME

Fujitsu

Fujitsu FLL177ME is an N-CHANNEL RF Power FET with 15V DS Breakdown Voltage, ideal for AMPLIFIER applications in L BAND. Featuring DEPLETION MODE operation, it offers 7.5W Max Power Dissipation at 175°C max temp, housed in a CERAMIC/METAL-SEALED COFIRED package with FLANGE MOUNT style.
LET9070CB by STMicroelectronics

LET9070CB

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
934064594112 by NXP Semiconductors

934064594112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Package Style (Meter): FLATPACK; Operating Mode: ENHANCEMENT MODE;
CGHV40050P by Wolfspeed

CGHV40050P

Wolfspeed

CGHV40050P by Wolfspeed is an N-CHANNEL RF Power FET with a 150V DS Breakdown Voltage. Ideal for S BAND applications, it operates in DEPLETION MODE with a max ID of 6.3A and Crss of 0.3pF.