NXP Semiconductors - BLP8G20S-80P

  1. Home
  2. NXP Semiconductors - BLP8G20S-80P
BLP8G20S-80P by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLP8G20S-80P
Description RF Small Signal Field-Effect Transistors;
Datasheet BLP8G20S-80P Datasheet
In Stock1,391
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,391 - -

Popular Products

Category Top Products

BLF184XR by NXP Semiconductors

BLF184XR

NXP Semiconductors

BLF184XR by NXP Semiconductors is an N-CHANNEL RF FET with 135V DS Breakdown Voltage, 22.8 dB Power Gain, and operates in the ULTRA HIGH FREQUENCY BAND. It is commonly used as an AMPLIFIER in applications requiring a COMMON SOURCE configuration. The transistor comes in a CERAMIC, METAL-SEALED COFIRED package with FLANGE MOUNT style for surface mounting.
BLF888ES by NXP Semiconductors

BLF888ES

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Application: AMPLIFIER; Terminal Position: DUAL; Reference Standard: IEC-60134;
BF904RT/R by NXP Semiconductors

BF904RT/R

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 7 V; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BF545A-T by NXP Semiconductors

BF545A-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: JUNCTION; Terminal Position: DUAL; Transistor Element Material: SILICON;
SMMBFJ310LT1 by Onsemi

SMMBFJ310LT1

Onsemi

SMMBFJ310LT1 by Onsemi is an N-CHANNEL RF FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance with 2.5pF Crss feedback capacitance. This SMALL OUTLINE transistor features GULL WING terminals and SILICON element material.
FLU17XM by Eudyna Devices

FLU17XM

Eudyna Devices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; No. of Elements: 1; Additional Features: HIGH RELIABILITY;
BF998 by Vishay Semiconductors

BF998

Vishay Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Finish: MATTE TIN; Package Style (Meter): SMALL OUTLINE;
MPF102RLRP by Onsemi

MPF102RLRP

Onsemi

MPF102RLRP by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a VERY HIGH FREQUENCY BAND and features a 3pF Crss. The transistor's SILICON element and TIN LEAD finish ensure reliable performance up to 125 °C.
934054150215 by NXP Semiconductors

934054150215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Case Connection: SOURCE; Terminal Position: DUAL;
934055134215 by NXP Semiconductors

934055134215

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Position: DUAL; No. of Terminals: 4; Package Shape: RECTANGULAR;
2N3823UB by Microchip Technology

2N3823UB

Microchip Technology

2N3823UB by Microchip Technology is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers VERY HIGH FREQUENCY BAND performance. Ideal for applications requiring SMALL OUTLINE packages and SILICON transistor element material, with a max temp of 200 °C.
BF997-TAPE-13 by NXP Semiconductors

BF997-TAPE-13

NXP Semiconductors

BF997-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a dual gate, depletion mode operation with a max DS breakdown voltage of 20V and operates in the ultra-high frequency band. This surface-mount transistor ensures reliable performance up to 150 °C.
BF256ARLRE by Onsemi

BF256ARLRE

Onsemi

BF256ARLRE by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance. Ideal for applications requiring a SINGLE configuration, such as RF amplifiers and oscillators.
2SK1240 by Onsemi

2SK1240

Onsemi

N-CHANNEL; Maximum Drain Current (ID): .06 A; Maximum Power Dissipation Ambient: .18 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): .06 A;
MMBFU310LT1G by Onsemi

MMBFU310LT1G

Onsemi

MMBFU310LT1G by Onsemi is an N-CHANNEL RF FET with a 25V DS breakdown voltage, operating in DEPLETION MODE. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a small outline package style and max power dissipation of 0.225W.
BLF8G27LS-100 by NXP Semiconductors

BLF8G27LS-100

NXP Semiconductors

RF Small Signal Field-Effect Transistors;
2N4416 by Asi Semiconductor

2N4416

Asi Semiconductor

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Elements: 1; Terminal Finish: TIN LEAD; Transistor Element Material: SILICON;
BF545B-TAPE-13 by NXP Semiconductors

BF545B-TAPE-13

NXP Semiconductors

BF545B-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 30V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.
BF998 by Siemens

BF998

Siemens

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (Abs) (ID): .03 A; Terminal Form: GULL WING;
BLF8G27LS-150GV by NXP Semiconductors

BLF8G27LS-150GV

NXP Semiconductors

RF Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Moisture Sensitivity Level (MSL): NOT APPLICABLE;