NXP Semiconductors - BLS7G2730LS-200PU

  1. Home
  2. NXP Semiconductors - BLS7G2730LS-200PU
BLS7G2730LS-200PU by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLS7G2730LS-200PU
Description N-CHANNEL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 225 Cel; Operating Mode: ENHANCEMENT MODE;
Datasheet BLS7G2730LS-200PU Datasheet
In Stock1,614
NAME DESCRIPTION
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 225 Cel
Sub-Category: FET General Purpose Powers
Polarity or Channel Type: N-CHANNEL
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,614 - -

Popular Products

Category Top Products

IRF530A by Fairchild Semiconductor

IRF530A

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; JESD-609 Code: e3; Maximum Operating Temperature: 175 Cel;
BSC030P03NS3GXT by Infineon Technologies

BSC030P03NS3GXT

Infineon Technologies

BSC030P03NS3GXT by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 200A IDM, 345mJ EAS, and 0.0046 ohm RDS(ON). With ENHANCEMENT MODE operation and -55 to 150 °C temperature range, it offers high performance in a SMALL OUTLINE package.
TN2510N8-G by Microchip Technology

TN2510N8-G

Microchip Technology

TN2510N8-G by Microchip Technology is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 5A IDM, 1.6W Abs Power Dissipation, and operates in ENHANCEMENT MODE. With METAL-OXIDE SEMICONDUCTOR technology and -55 to 150 °C temperature range, it offers fast ton of 20ns and toff of 30ns for efficient performance.
SUD50P08-25L-E3 by Vishay Intertechnology

SUD50P08-25L-E3

Vishay Intertechnology

Vishay Intertechnology's SUD50P08-25L-E3 is a P-CHANNEL FET with 80V DS Breakdown Voltage, 40A IDM, and 0.0252 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 175°C.
IRFP460APBF by Vishay Siliconix

IRFP460APBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Package Style (Meter): FLANGE MOUNT; Transistor Application: SWITCHING;
IRFR7440TRPBF by International Rectifier

IRFR7440TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Minimum Operating Temperature: -55 Cel; Maximum Pulsed Drain Current (IDM): 760 A;
NVMFS5C604NLAFT1G by Onsemi

NVMFS5C604NLAFT1G

Onsemi

NVMFS5C604NLAFT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 900A IDM, and 0.0017 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IRF9530NSTRLPBF by International Rectifier

IRF9530NSTRLPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Transistor Element Material: SILICON; JESD-30 Code: R-PSSO-G2;
IRF540NSTRLPBF by Infineon Technologies

IRF540NSTRLPBF

Infineon Technologies

IRF540NSTRLPBF by Infineon Technologies is a N-CHANNEL FET with 100V DS Breakdown Voltage, suitable for SWITCHING applications. It has a max Drain Current of 33A and Power Dissipation of 130W. The transistor operates in ENHANCEMENT MODE and features a built-in DIODE, making it ideal for high-power switching circuits.
IRF9530 by Samsung

IRF9530

Samsung

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; Qualification: Not Qualified; Transistor Application: SWITCHING;
CSD18531Q5AT by Texas Instruments

CSD18531Q5AT

Texas Instruments

CSD18531Q5AT by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has a 60V DS Breakdown Voltage, 19A Drain Current, and 0.0058 ohm On Resistance. With an operating range of -55 to 150 °C, it's ideal for power management in various electronic devices.
BSP317PH6327XTSA1 by Infineon Technologies

BSP317PH6327XTSA1

Infineon Technologies

BSP317PH6327XTSA1 by Infineon is a P-CHANNEL FET with 250V DS breakdown voltage. It features a single configuration with built-in diode, suitable for enhancement mode operation. This MOSFET has 1.72A max pulsed drain current and is ideal for automotive applications meeting AEC-Q101 standards.
IRFZ44NS by International Rectifier

IRFZ44NS

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; No. of Elements: 1; Package Shape: RECTANGULAR;
IRLML6402GTRPBF by Infineon Technologies

IRLML6402GTRPBF

Infineon Technologies

Infineon's IRLML6402GTRPBF is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 22A IDM, 11mJ EAS, and 0.065 ohm RDS(on). With a small outline package and -55 to 150 °C operating range, it offers high performance in compact designs.
SQJ431AEP-T1_GE3 by Vishay Intertechnology

SQJ431AEP-T1_GE3

Vishay Intertechnology

Vishay Intertechnology's SQJ431AEP-T1_GE3 is a P-CHANNEL FET with 200V DS Breakdown Voltage, 37A IDM, and 0.315 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
SI7461DP-T1-E3 by Vishay Intertechnology

SI7461DP-T1-E3

Vishay Intertechnology

Vishay Intertechnology's SI7461DP-T1-E3 is a P-CHANNEL FET with 60V DS Breakdown Voltage, 8.6A ID, and 0.0145 ohm RDS(on). Ideal for SWITCHING applications, it features a 60A IDM and 125mJ EAS in a SMALL OUTLINE package with an operating temp of 150°C.
SI7157DP-T1-GE3 by Vishay Intertechnology

SI7157DP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7157DP-T1-GE3 is a P-channel FET with 20V DS breakdown voltage, 300A IDM, and 0.0016 ohm max RDS(on). Ideal for switching applications in enhancement mode operation. Features include built-in diode, small outline package style, and matte tin terminal finish.
IRFP260NPBF by Infineon Technologies

IRFP260NPBF

Infineon Technologies

IRFP260NPBF by Infineon is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 50A Drain Current. Ideal for SWITCHING applications, it features a 300W Power Dissipation, -55 to 175 °C Operating Temp, and 0.04 ohm On Resistance.
IRF6215STRLPBF by International Rectifier

IRF6215STRLPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Additional Features: AVALANCHE RATED, HIGH RELIABILITY; Package Body Material: PLASTIC/EPOXY;
RJK0651DPB-00#J5 by Renesas Electronics

RJK0651DPB-00#J5

Renesas Electronics

Renesas Electronics RJK0651DPB-00#J5 is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. Features include 100A max pulsed drain current, 11.7mJ avalanche energy rating, and 0.018 ohm max drain-source resistance. Its small outline package and nickel palladium gold finish make it suitable for high-power enhancement mode operations up to 150°C.