BLT82-T by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BLT82-T
Description	NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON;
Datasheet	BLT82-T Datasheet
In Stock	3,350

NAME	DESCRIPTION
Minimum Power Gain (Gp):	8 dB
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	1 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
JEDEC-95 Code:	MS-012AA
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	30
No. of Terminals:	8
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	10 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	175 Cel
Maximum Power Dissipation Ambient:	1.9 W

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,350	-	-

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