
Image shown is a representation only.
Manufacturer | NXP Semiconductors |
---|---|
Manufacturer's Part Number | BLV32F |
Description | NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2000 MHz; Maximum Collector Current (IC): 4 A; Transistor Element Material: SILICON; |
Datasheet | BLV32F Datasheet |
In Stock | 3,061 |
NAME | DESCRIPTION |
---|---|
Minimum Power Gain (Gp): | 16 dB |
Nominal Transition Frequency (fT): | 2000 MHz |
Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
Maximum Collector Current (IC): | 4 A |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Transistor Application: | AMPLIFIER |
Polarity or Channel Type: | NPN |
Surface Mount: | NO |
Minimum DC Current Gain (hFE): | 20 |
No. of Terminals: | 6 |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 32 V |
Terminal Position: | RADIAL |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | O-CRFM-F6 |
No. of Elements: | 1 |
Package Shape: | ROUND |
Terminal Form: | FLAT |
Highest Frequency Band: | VERY HIGH FREQUENCY BAND |
Maximum Operating Temperature: | 200 Cel |
Case Connection: | ISOLATED |
Maximum Power Dissipation Ambient: | 82 W |