NXP Semiconductors - BLX65E

  1. Home
  2. NXP Semiconductors - BLX65E
BLX65E by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLX65E
Description NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1400 MHz; Maximum Collector Current (IC): .7 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
Datasheet BLX65E Datasheet
In Stock2,932
NAME DESCRIPTION
Minimum Power Gain (Gp): 9 dB
Nominal Transition Frequency (fT): 1400 MHz
Package Body Material: METAL
Maximum Collector Current (IC): .7 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
JEDEC-95 Code: TO-39
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 10
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 16 V
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-MBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Case Connection: EMITTER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,932 - -

Popular Products

Category Top Products

BLV909T/R by NXP Semiconductors

BLV909T/R

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.5 A; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 8;
SD1476 by STMicroelectronics

SD1476

STMicroelectronics

SD1476 by STMicroelectronics is a NPN RF BJT transistor with 2 elements, suitable for amplifier applications. It operates in the very high frequency band, with a max collector-emitter voltage of 40V and max collector current of 25A. The package style is flange mount, making it ideal for surface mount applications.
935360897178 by NXP Semiconductors

935360897178

NXP Semiconductors

RF Power Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
BLV11 by NXP Semiconductors

BLV11

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 850 MHz; Maximum Power Dissipation (Abs): 36 W; Maximum Collector Current (IC): 3 A;
BDP950H6327TR by Infineon Technologies

BDP950H6327TR

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON;
PH1214-55EL by M/a-com Technology Solutions

PH1214-55EL

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 7 A; Terminal Form: FLAT;
BLX13 by NXP Semiconductors

BLX13

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 500 MHz; No. of Terminals: 4; Transistor Application: AMPLIFIER;
BLV20 by NXP Semiconductors

BLV20

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .9 A;
LLE18040XTRAY by NXP Semiconductors

LLE18040XTRAY

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Form: FLAT;
2SC2102 by Toshiba

2SC2102

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3.5 A; Terminal Position: RADIAL; Package Shape: ROUND;
SD1660 by STMicroelectronics

SD1660

STMicroelectronics

SD1660 by STMicroelectronics is a NPN RF BJT with 2 elements, suitable for amplifier applications. It operates in the ultra high frequency band, with max power dissipation of 310W and max collector-emitter voltage of 30V. This transistor has a common emitter configuration and is surface mountable.
BFQ291 by NXP Semiconductors

BFQ291

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 400 MHz; Maximum Collector Current (IC): .25 A; Qualification: Not Qualified;
2005 by Microsemi

2005

Microsemi

Microsemi's 2005 is a NPN RF Power BJT with CERAMIC, METAL-SEALED COFIRED package. It operates in L BAND with max IC of 1 A, suitable for amplifier applications. This single configuration transistor has flat terminals and can withstand up to 200 °C operating temperature.
BLV945B by NXP Semiconductors

BLV945B

NXP Semiconductors

BLV945B by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 60W, operates at ultra-high frequencies, and offers a min power gain of 8.5 dB. Its ceramic, metal-sealed package ensures durability in demanding environments.
BLV38 by NXP Semiconductors

BLV38

NXP Semiconductors

BLV38 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 290 W, operates at very high frequencies, and offers a min power gain of 8 dB. Ideal for demanding RF environments, it ensures reliable performance.
SD1135-03 by STMicroelectronics

SD1135-03

STMicroelectronics

SD1135-03 by STMicroelectronics is a NPN RF BJT with 15W power dissipation, suitable for amplifier applications in VHF band. It has 4 terminals, max. collector current of 1.7A, and operates up to 200 °C. Ideal for high-frequency amplification needs due to its very high frequency band capability.
BLY92C/01 by NXP Semiconductors

BLY92C/01

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): 1.5 A; JESD-30 Code: O-CRDB-F4;
ISL73096RHVX by Renesas Electronics

ISL73096RHVX

Renesas Electronics

NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Maximum Operating Temperature: 125 Cel;
SD4701 by STMicroelectronics

SD4701

STMicroelectronics

SD4701 by STMicroelectronics is a NPN RF BJT transistor with 145W power dissipation, suitable for amplifier applications in the UHF band. It has a max collector-emitter voltage of 30V, operates at up to 200 °C, and features a flange mount package style.
BLU99/SL by NXP Semiconductors

BLU99/SL

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .8 A; Minimum Power Gain (Gp): 10.5 dB;