NXP Semiconductors - BSD22

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BSD22 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BSD22
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .23 W; Maximum Operating Temperature: 125 Cel; Package Body Material: PLASTIC/EPOXY;
Datasheet BSD22 Datasheet
In Stock348
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .05 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 4
Maximum Power Dissipation (Abs): .23 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 125 Cel
Case Connection: SUBSTRATE
Maximum Drain-Source On Resistance: 50 ohm
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): .05 A
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