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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BSD22T/R |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Operating Mode: DEPLETION MODE; Maximum Operating Temperature: 125 Cel; |
| Datasheet | BSD22T/R Datasheet |
| In Stock | 44 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | .05 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| JESD-609 Code: | e3 |
| No. of Terminals: | 4 |
| Minimum DS Breakdown Voltage: | 20 V |
| Qualification: | Not Qualified |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | DEPLETION MODE |
| Maximum Operating Temperature: | 125 Cel |
| Case Connection: | SUBSTRATE |
| Maximum Drain-Source On Resistance: | 50 ohm |
