NXP Semiconductors - BSP110-TAPE-13

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BSP110-TAPE-13 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BSP110-TAPE-13
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Terminal Form: GULL WING; Maximum Drain Current (ID): .325 A;
Datasheet BSP110-TAPE-13 Datasheet
In Stock2,409
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 5 ns
Maximum Drain Current (ID): .325 A
Maximum Pulsed Drain Current (IDM): .65 A
Surface Mount: YES
No. of Terminals: 4
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 10 ns
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 7 ohm
Maximum Feedback Capacitance (Crss): 6 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 80 V
Qualification: Not Qualified
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