NXP Semiconductors - BSP110TRL

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BSP110TRL by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BSP110TRL
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 80 V; JESD-609 Code: e3; Maximum Drain Current (ID): .325 A;
Datasheet BSP110TRL Datasheet
In Stock1,327
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .325 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 4
Minimum DS Breakdown Voltage: 80 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: 7 ohm
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

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