NXP Semiconductors - BSP120-TAPE-13

BSP120-TAPE-13 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BSP120-TAPE-13
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Turn Off Time (toff): 20 ns; Maximum Turn On Time (ton): 6 ns; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet BSP120-TAPE-13 Datasheet
In Stock567
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 6 ns
Maximum Drain Current (ID): .25 A
Maximum Pulsed Drain Current (IDM): .8 A
Surface Mount: YES
No. of Terminals: 4
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 20 ns
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 12 ohm
Maximum Feedback Capacitance (Crss): 10 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
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