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Manufacturer | NXP Semiconductors |
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Manufacturer's Part Number | BSP120-TAPE-13 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Turn Off Time (toff): 20 ns; Maximum Turn On Time (ton): 6 ns; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
Datasheet | BSP120-TAPE-13 Datasheet |
In Stock | 567 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Turn On Time (ton): | 6 ns |
Maximum Drain Current (ID): | .25 A |
Maximum Pulsed Drain Current (IDM): | .8 A |
Surface Mount: | YES |
No. of Terminals: | 4 |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
Maximum Turn Off Time (toff): | 20 ns |
JESD-30 Code: | R-PDSO-G4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | 12 ohm |
Maximum Feedback Capacitance (Crss): | 10 pF |
Polarity or Channel Type: | N-CHANNEL |
Minimum DS Breakdown Voltage: | 200 V |
Qualification: | Not Qualified |