NXP Semiconductors - BST61T/R

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BST61T/R by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BST61T/R
Description PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;
Datasheet BST61T/R Datasheet
In Stock2,993
NAME DESCRIPTION
Nominal Transition Frequency (fT): 200 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1 A
Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 1 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
JEDEC-95 Code: TO-243AA
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 2000
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 60 V
Maximum VCEsat: 1.3 V
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Pricing (USD)

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