
Image shown is a representation only.
Manufacturer | NXP Semiconductors |
---|---|
Manufacturer's Part Number | BST80-TAPE-13 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE; Package Body Material: PLASTIC/EPOXY; |
Datasheet | BST80-TAPE-13 Datasheet |
In Stock | 47 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Feedback Capacitance (Crss): | 12 pF |
Maximum Drain Current (ID): | .5 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 3 |
Minimum DS Breakdown Voltage: | 80 V |
Qualification: | Not Qualified |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-F3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | 3 ohm |