NXP Semiconductors - BU705D

  1. Home
  2. NXP Semiconductors - BU705D
BU705D by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BU705D
Description NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 7 MHz; Maximum Collector Current (IC): 2.5 A; Maximum Power Dissipation Ambient: 75 W;
Datasheet BU705D Datasheet
In Stock4,261
NAME DESCRIPTION
Nominal Transition Frequency (fT): 7 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 2.5 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 2.2
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 700 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Maximum VCEsat: 1 V
Maximum Power Dissipation Ambient: 75 W
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,261 - -

Popular Products

Category Top Products

NJVMJD31CT4G by Onsemi

NJVMJD31CT4G

Onsemi

NJVMJD31CT4G by Onsemi is a NPN BJT with 100V VCEO, 3A IC, and 15W Ptot. Ideal for automotive applications due to AEC-Q101 compliance and -65 to 150°C operating range. Suitable for surface mount designs with GULL WING terminals in a small outline package.
TIP110 by Texas Instruments

TIP110

Texas Instruments

TIP110 by Texas Instruments is a NPN Darlington BJT transistor with 500 min hFE. It has a max power dissipation of 50W and can handle up to 60V collector-emitter voltage. Ideal for applications requiring high current gain and power dissipation in through-hole mounting configurations.
FZT851TA by Zetex Plc

FZT851TA

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): 6 A; Package Body Material: PLASTIC/EPOXY;
ULN2003APWRG4 by Texas Instruments

ULN2003APWRG4

Texas Instruments

ULN2003APWRG4 by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, suitable for switching applications. This surface-mount transistor in a small outline package is ideal for complex configurations requiring high reliability.
D44H11G by Onsemi

D44H11G

Onsemi

D44H11G by Onsemi is a NPN power bipolar junction transistor (BJT) with a max collector-emitter voltage of 80V and a max collector current of 10A. It is commonly used for switching applications due to its high power dissipation of 50W and low min DC current gain (hFE) of 40.
BD140-16 by NXP Semiconductors

BD140-16

NXP Semiconductors

BD140-16 by NXP Semiconductors is a PNP power BJT transistor with max VCEsat of 0.5V, hFE of 100, and IC of 1.5A. Ideal for amplifier applications, it has a max operating temp of 150°C and can handle up to 8W power dissipation in a flange mount package style.
JAN2N3055 by New England Semiconductor

JAN2N3055

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Reference Standard: MIL-19500/407; Transistor Application: SWITCHING;
TIP42A by Inchange Semiconductor

TIP42A

Inchange Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
MJE340 by Motorola

MJE340

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .5 A; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb);
2N2920A by Central Semiconductor

2N2920A

Central Semiconductor

Power Bipolar Transistors; Qualification: Not Qualified; JESD-609 Code: e0; Terminal Finish: TIN LEAD;
TIP112 by General Transistor

TIP112

General Transistor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
ULN2003ANE4 by Texas Instruments

ULN2003ANE4

Texas Instruments

ULN2003ANE4 by Texas Instruments is a NPN BJT with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, making it ideal for switching applications. The package style is in-line with through-hole terminals, suitable for complex configurations.
MJD340T4 by Motorola

MJD340T4

Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 30; Terminal Form: GULL WING;
TIP32C by STMicroelectronics

TIP32C

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP147 by New Jersey Semiconductor Products

TIP147

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Maximum Collector Current (IC): 10 A; Transistor Element Material: SILICON; No. of Elements: 1; Minimum DC Current Gain (hFE): 500;
TIP115 by Nte Electronics

TIP115

Nte Electronics

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; No. of Terminals: 3;
TIP29C by Continental Device India

TIP29C

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
TIP142 by Motorola

TIP142

Motorola

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A;
2N2905A by Central Semiconductor

2N2905A

Central Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .6 A; Transistor Application: SWITCHING;
TIP125 by Asi Semiconductor

TIP125

Asi Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A;