NXP Semiconductors - BUK105-50SP

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BUK105-50SP by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK105-50SP
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Transistor Application: SWITCHING; Maximum Drain-Source On Resistance: .05 ohm;
Datasheet BUK105-50SP Datasheet
In Stock4,256
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 29 A
Maximum Pulsed Drain Current (IDM): 120 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 5
Maximum Power Dissipation (Abs): 75 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .05 ohm
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 50 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Maximum Drain Current (Abs) (ID): 26 A
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