NXP Semiconductors - BUK416-100BE

  1. Home
  2. NXP Semiconductors - BUK416-100BE
BUK416-100BE by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK416-100BE
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Terminal Form: SOLDER LUG; Package Style (Meter): FLANGE MOUNT;
Datasheet BUK416-100BE Datasheet
In Stock2,300
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 100 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 4
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-D4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: SOLDER LUG
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .016 ohm
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,300 - -

Popular Products

Category Top Products

FDS4559 by Onsemi

FDS4559

Onsemi

FDS4559 by Onsemi is a Power FET with N-Channel and P-Channel types, ideal for switching applications. It features a 60V min DS breakdown voltage, 20A max pulsed drain current, and 0.055 ohm max drain-source resistance. With a small outline package style and matte tin terminal finish, it operates in enhancement mode up to 175°C.
NDS355AN-NB9L007A by Fairchild Semiconductor

NDS355AN-NB9L007A

Fairchild Semiconductor

NDS355AN-NB9L007A by Fairchild Semiconductor is an N-CHANNEL power FET with a max drain current of 1.7A and a max power dissipation of 0.5W. It is suitable for applications requiring enhancement mode operation, such as power management systems or motor control circuits.
IPB020N10N5ATMA1 by Infineon Technologies

IPB020N10N5ATMA1

Infineon Technologies

Infineon's IPB020N10N5ATMA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.002 ohm RDS(on), and 120A ID. Ideal for switching applications due to its 480A IDM and built-in diode. Features GULL WING terminals in a SMALL OUTLINE package style.
PSMN040-100MSEX by Nexperia

PSMN040-100MSEX

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Avalanche Energy Rating (EAS): 54 mJ; Transistor Application: SWITCHING;
FQT7N10LTF by Onsemi

FQT7N10LTF

Onsemi

FQT7N10LTF by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It has a Max IDM of 6.8A and EAS of 50mJ, suitable for SWITCHING applications. This SINGLE transistor in PLASTIC/EPOXY package operates in ENHANCEMENT MODE at up to 150°C, with 0.38 ohm RDS(on) and 2W Pdiss.
PSMN4R8-100BSE by Nexperia

PSMN4R8-100BSE

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 405 W; Terminal Position: SINGLE; Peak Reflow Temperature (C): 260;
NTP8G202NG by Onsemi

NTP8G202NG

Onsemi

NTP8G202NG by Onsemi is a single N-channel Power FET with 9A max drain current and 65W max power dissipation. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Operating temperature up to 150°C ensures reliable performance in demanding environments.
IRFP260NPBF by International Rectifier

IRFP260NPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Qualification: Not Qualified; Transistor Application: SWITCHING;
IRFS4010TRLPBF by Infineon Technologies

IRFS4010TRLPBF

Infineon Technologies

IRFS4010TRLPBF by Infineon is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 180A Drain Current. It is used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max power dissipation of 375W.
FDC5612-F095 by Fairchild Semiconductor

FDC5612-F095

Fairchild Semiconductor

FDC5612-F095 by Fairchild Semiconductor is a N-CHANNEL Power FET with 4.3A max drain current and 1.6W power dissipation. Ideal for applications requiring high efficiency in enhancement mode operation, such as power management systems and motor control circuits.
IRFR7440TRPBF by Infineon Technologies

IRFR7440TRPBF

Infineon Technologies

IRFR7440TRPBF by Infineon is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 0.0024 ohm Drain-Source On Resistance. Ideal for SWITCHING applications, it features a max IDM of 760A and EAS of 376mJ. Operating in ENHANCEMENT MODE, this transistor has a max temp of 175°C and can handle up to 180A drain current.
SISS71DN-T1-GE3 by Vishay Intertechnology

SISS71DN-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SISS71DN-T1-GE3 is a P-channel FET with 100V DS breakdown voltage, ideal for switching applications. Featuring 40A max pulsed drain current and 0.082 ohm max on-resistance, it operates in enhancement mode with -50 to 150°C temperature range. Suitable for surface mount designs, this transistor offers high performance in a compact square package.
ZXMP6A17E6TA by Diodes Incorporated

ZXMP6A17E6TA

Diodes Incorporated

ZXMP6A17E6TA by Diodes Inc. is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 13.6A IDM, 3A ID, and 0.125 ohm RDS(ON). With a max power dissipation of 1.92W and operating temperature up to 150°C, it's suitable for various electronic designs.
IRFP460LC by Vishay Siliconix

IRFP460LC

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: AVALANCHE RATED; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1;
SI4532DY by Fairchild Semiconductor

SI4532DY

Fairchild Semiconductor

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 30 V;
IRFP460PBF by International Rectifier

IRFP460PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Package Style (Meter): FLANGE MOUNT; Case Connection: DRAIN;
FDS4675 by Onsemi

FDS4675

Onsemi

FDS4675 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 50A and ID of 11A, with 0.013 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE and can withstand temperatures from -55 to 175 °C.
FDD4685 by Onsemi

FDD4685

Onsemi

FDD4685 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for applications requiring high power dissipation up to 69W. Featuring a max Drain Current of 40A and an Avalanche Energy Rating of 121mJ, it operates in Enhancement Mode for efficient performance in various electronic circuits.
IRF840SPBF by International Rectifier

IRF840SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; No. of Elements: 1;
IRLML0100TRPBF by International Rectifier

IRLML0100TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Package Style (Meter): SMALL OUTLINE; JEDEC-95 Code: TO-236AB;