NXP Semiconductors - BUK482-60AT/R

BUK482-60AT/R by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK482-60AT/R
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G4; Qualification: Not Qualified; Maximum Drain-Source On Resistance: .13 ohm;
Datasheet BUK482-60AT/R Datasheet
In Stock3,915
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 59 ns
Maximum Drain Current (ID): 2.7 A
Maximum Pulsed Drain Current (IDM): 11 A
Surface Mount: YES
No. of Terminals: 4
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 90 ns
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .13 ohm
Avalanche Energy Rating (EAS): 30 mJ
Maximum Feedback Capacitance (Crss): 100 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
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