BUK542-100A by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BUK542-100A
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .28 ohm; Maximum Power Dissipation Ambient: 22 W;
Datasheet	BUK542-100A Datasheet
In Stock	111

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	88 ns
Maximum Drain Current (ID):	6.3 A
Maximum Pulsed Drain Current (IDM):	25 A
Surface Mount:	NO
No. of Terminals:	3
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	115 ns
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Power Dissipation Ambient:	22 W
Maximum Drain-Source On Resistance:	.28 ohm
Avalanche Energy Rating (EAS):	30 mJ
Maximum Feedback Capacitance (Crss):	50 pF
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	100 V
Qualification:	Not Qualified

Pricing (USD)

Qty.	Unit Price	Ext. Price
111	-	-

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