NXP Semiconductors - BUK564-200A

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BUK564-200A by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK564-200A
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 200 V; Maximum Drain-Source On Resistance: .4 ohm; JESD-30 Code: R-PSSO-G2;
Datasheet BUK564-200A Datasheet
In Stock2,114
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 140 ns
Maximum Drain Current (ID): 9.2 A
Maximum Pulsed Drain Current (IDM): 36 A
Surface Mount: YES
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 255 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 90 W
Maximum Drain-Source On Resistance: .4 ohm
Avalanche Energy Rating (EAS): 50 mJ
Maximum Feedback Capacitance (Crss): 90 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
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