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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BUK581-60A |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V; |
| Datasheet | BUK581-60A Datasheet |
| In Stock | 124 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 65 ns |
| Maximum Drain Current (ID): | 1.5 A |
| Maximum Pulsed Drain Current (IDM): | 6 A |
| Sub-Category: | FET General Purpose Powers |
| Surface Mount: | YES |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 1.5 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 60 ns |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .4 ohm |
| Maximum Feedback Capacitance (Crss): | 50 pF |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 60 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 1.5 A |
