NXP Semiconductors - BUK7208-40B,118

BUK7208-40B,118 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK7208-40B,118
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 167 W; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 2;
Datasheet BUK7208-40B,118 Datasheet
In Stock2,204
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 75 A
Maximum Pulsed Drain Current (IDM): 397 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Maximum Power Dissipation (Abs): 167 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 185 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .008 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 240 mJ
JEDEC-95 Code: TO-252AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 40 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 105 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
2,204 $0.295 $650.180

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