BUK7613-60E by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BUK7613-60E
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
Datasheet	BUK7613-60E Datasheet
In Stock	207

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	58 A
Maximum Pulsed Drain Current (IDM):	234 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.013 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	37 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Additional Features:	AVALANCHE RATED
Reference Standard:	AEC-Q101; IEC-60134

Pricing (USD)

Qty.	Unit Price	Ext. Price
207	-	-

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