NXP Semiconductors - BUK7K52-60E

BUK7K52-60E by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK7K52-60E
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; Maximum Pulsed Drain Current (IDM): 71 A; Peak Reflow Temperature (C): 260;
Datasheet BUK7K52-60E Datasheet
In Stock47
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 15.4 A
Maximum Pulsed Drain Current (IDM): 71 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .045 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 11.6 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 60 V
Reference Standard: AEC-Q101; IEC-60134
Peak Reflow Temperature (C): 260
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