NXP Semiconductors - BUK7K8R7-40E

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BUK7K8R7-40E by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK7K8R7-40E
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; No. of Terminals: 6; Minimum DS Breakdown Voltage: 40 V;
Datasheet BUK7K8R7-40E Datasheet
In Stock2,582
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 30 A
Maximum Pulsed Drain Current (IDM): 225 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0085 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 84 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 40 V
Reference Standard: AEC-Q101; IEC-60134
Peak Reflow Temperature (C): 260
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