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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BUK9832-55A/CUX |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: DUAL; |
| Datasheet | BUK9832-55A/CUX Datasheet |
| In Stock | 30,733 |
| NAME | DESCRIPTION |
|---|---|
| Avalanche Energy Rating (EAS): | 100 mJ |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 12 A |
| Maximum Pulsed Drain Current (IDM): | 47 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 4 |
| Minimum DS Breakdown Voltage: | 55 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Reference Standard: | AEC-Q101; IEC-60134 |
| Case Connection: | DRAIN |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum Drain-Source On Resistance: | .036 ohm |
