NXP Semiconductors - BUK9E1R9-40E,127

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BUK9E1R9-40E,127 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK9E1R9-40E,127
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Transistor Application: SWITCHING; Maximum Pulsed Drain Current (IDM): 1228 A;
Datasheet BUK9E1R9-40E,127 Datasheet
In Stock1,735
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 120 A
Maximum Pulsed Drain Current (IDM): 1228 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: Tin (Sn)
No. of Terminals: 3
Maximum Power Dissipation (Abs): 349 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .00193 ohm
Avalanche Energy Rating (EAS): 1008 mJ
Other Names: 934066511127
2156-BUK9E1R9-40E127-NX
NEXNXPBUK9E1R9-40E,127
568-9870-5
BUK9E1R940E127
JEDEC-95 Code: TO-262AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 40 V
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101; IEC-60134
Maximum Drain Current (Abs) (ID): 120 A
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