BUK9K8R7-40E by NXP Semiconductors | Transistors

Image shown is a representation only.

Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BUK9K8R7-40E
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 211 A; Case Connection: DRAIN; Package Body Material: PLASTIC/EPOXY;
Datasheet	BUK9K8R7-40E Datasheet
In Stock	3,520

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	30 A
Maximum Pulsed Drain Current (IDM):	211 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	6
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0094 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	84 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	40 V
Reference Standard:	AEC-Q101; IEC-60134
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,520	-	-

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;

Vishay Intertechnology's CRCW04020000Z0ED is a 0 ohm jumper resistor with METAL GLAZE/THICK FILM tech. Operating b/w -55 to 155 °C, it suits SMT applications in automotive electronics due to AEC-Q200 compliance and 0.063 W power dissipation.

Abracon's E8WSDC12-32.768KTR crystal oscillator offers 20 ppm frequency tolerance, 144% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and communication systems.

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 40; Minimum DS Breakdown Voltage: 60 V;

FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Maximum Drain Current (ID): .34 A;

RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Operating Temperature: 125 Cel; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: 30 A;