NXP Semiconductors - BYG118B

  1. Home
  2. NXP Semiconductors - BYG118B
BYG118B by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BYG118B
Description NARROW BAND HIGH POWER; Maximum Operating Frequency: 905 MHz; Minimum Operating Frequency: 872 MHz;
Datasheet BYG118B Datasheet
In Stock4,262
NAME DESCRIPTION
Minimum Operating Frequency: 872 MHz
Maximum Operating Frequency: 905 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,262 - -

Popular Products

Category Top Products

HMC505LP4TR by Hittite Microwave

HMC505LP4TR

Hittite Microwave

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 3;
HMC994ALP5ETR by Analog Devices

HMC994ALP5ETR

Analog Devices

WIDE BAND MEDIUM POWER;
RF3827 by Rf Micro Devices

RF3827

Rf Micro Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 8;
HELA-10D+ by Mini-circuits

HELA-10D+

Mini-circuits

HELA-10D+ by Mini-circuits is a wideband medium power RF amplifier with 9.3 dB gain, operating from 8 MHz to 300 MHz. It offers a max input power of 20 dBm and VSWR of 1.2, making it ideal for RF & microwave applications requiring high performance amplification in a compact form factor.
HMC1087 by Hittite Microwave

HMC1087

Hittite Microwave

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 4; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 34 dBm; Maximum Operating Frequency: 20000 MHz;
MAX2839ETN+ by Maxim Integrated

MAX2839ETN+

Maxim Integrated

NARROW BAND LOW POWER; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
BGU8009 by NXP Semiconductors

BGU8009

NXP Semiconductors

The NXP Semiconductors BGU8009 is a narrow band low power RF amplifier with a gain of 17.6 dB, operating b/w 1559-1610 MHz. It can handle up to 10 dBm CW input power and has an impedance of 50 ohm. Ideal for RF and microwave applications requiring high gain amplification in a compact form factor.
RF5110GTR7 by Qorvo

RF5110GTR7

Qorvo

Qorvo's RF5110GTR7 is a wide band medium power amplifier with 33 dB gain, operating from 150 MHz to 960 MHz. It has a max input power of 13 dBm and VSWR of 10, suitable for RF & microwave applications. With a construction of hybrid technology and surface mounting feature, it operates at temperatures ranging from -40°C to 85°C.
PMA3-14LN+ by Mini-circuits

PMA3-14LN+

Mini-circuits

The Mini-circuits PMA3-14LN+ is a wide band low power RF amplifier with 20.3 dB gain, operating from 50 MHz to 10 GHz. It has a max input power of 12 dBm and VSWR of 1.22, suitable for surface mount applications in RF & microwave systems requiring high performance amplification.
MAX2691EWS+T by Analog Devices

MAX2691EWS+T

Analog Devices

MAX2691EWS+T by Analog Devices is a BICMOS RF amplifier with 13.1 dB gain, operating at 1.8/3.3V. It is a wide band low power device suitable for surface mount applications in RF & Microwave systems, offering a characteristic impedance of 50 ohm and temperature range from -40 to 85°C.
TGA2214-CP by Qorvo

TGA2214-CP

Qorvo

WIDE BAND HIGH POWER;
TQP7M9105 by Triquint Semiconductor

TQP7M9105

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 1500 MHz; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 50 MHz;
MGA-86576-TR1G by Broadcom

MGA-86576-TR1G

Broadcom

Broadcom's MGA-86576-TR1G is a wide band low power RF amplifier with 20 dB gain, operating from 1500 to 8000 MHz. It has a max input power of 13 dBm and VSWR of 2.5, suitable for various RF & microwave applications requiring high performance in a compact form factor.
TGA4521 by Qorvo

TGA4521

Qorvo

Qorvo's TGA4521 is a GaAs RF amplifier with 16dB gain, operating from 32-45 GHz. It handles up to 20 dBm CW input power and requires a 6V supply. Ideal for wideband medium-power applications in RF and microwave systems.
AMMP-6220 by Broadcom

AMMP-6220

Broadcom

Broadcom's AMMP-6220 is a wide band low power RF amplifier with 50 ohm impedance and 18 dB gain. Operating from 6-20 GHz, it features Ni/Pd/Au finish. Ideal for applications requiring high frequency amplification in RF & microwave systems.
TGA2578-CP by Triquint Semiconductor

TGA2578-CP

Triquint Semiconductor

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Technology: GAN; Maximum Supply Current: 400 mA; Maximum Voltage Standing Wave Ratio: 10;
SGA-3363-TR1 by Sirenza Microdevices

SGA-3363-TR1

Sirenza Microdevices

WIDE BAND LOW POWER; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Input Power (CW): 5 dBm; Maximum Operating Frequency: 3600 MHz; Characteristic Impedance: 50 ohm; Gain: 15.5 dB;
HMC564LC4 by Hittite Microwave

HMC564LC4

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Gain: 14 dB;
EMM5077VU by Sumitomo Electric Industries

EMM5077VU

Sumitomo Electric Industries

Sumitomo Electric Industries' EMM5077VU is a wide band medium power RF amplifier with 21 dB gain and 26 dBm CW input power. Operating from -40 to 85 °C, it covers frequencies from 3400 to 5000 MHz. Ideal for RF applications requiring high performance in a compact form factor.
HMC516LC5TR by Analog Devices

HMC516LC5TR

Analog Devices

HMC516LC5TR by Analog Devices is a GAAS wide band low power RF amplifier with 1 function and 32 terminals. It operates at temperatures ranging from -40 to 85°C and requires a power supply of 3V, drawing a max current of 88mA. This surface mount package is suitable for various RF and microwave applications.