BYV32EB-200,118 by NXP Semiconductors | Diodes

Image shown is a representation only.

Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BYV32EB-200,118
Description	RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	BYV32EB-200,118 Datasheet
In Stock	5,682

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Forward Voltage (VF):	.85 V
Config:	COMMON CATHODE, 2 ELEMENTS
Diode Type:	RECTIFIER DIODE
Maximum Output Current:	20 A
Sub-Category:	Rectifier Diodes
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Case Connection:	CATHODE
Moisture Sensitivity Level (MSL):	1
No. of Phases:	1
Maximum Repetitive Peak Reverse Voltage:	200 V
JESD-609 Code:	e3
Maximum Non Repetitive Peak Forward Current:	137 A
Diode Element Material:	SILICON
Qualification:	Not Qualified
Additional Features:	FAST SWITCHING
Application:	ULTRA FAST SOFT RECOVERY
Maximum Reverse Recovery Time:	.025 us

Pricing (USD)

Qty.	Unit Price	Ext. Price
5,682	-	-

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 33 mJ;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

1N4148WT by Onsemi is a single rectifier diode with a max output current of 0.3A and forward voltage of 0.72V. It has a small outline package style, matte tin terminal finish, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time such as power supplies and signal demodulation circuits.

MBRS1100T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.75V. It operates in temperatures ranging from -65 to 175°C, making it suitable for power applications. With a reverse test voltage of 100V, this diode is ideal for high-power circuits requiring efficient rectification.

ESD5Z5.0T1G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 5V reverse test voltage and 174W peak power dissipation. It is used for transient suppression in electronic circuits, meeting IEC-61000-4-2, 4-4 standards and UL recognized for reliability.